?2011 fairchild semiconductor corporation www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet january 2012 unifet tm FDA38N30 n-channel mosfet 300v, 38a, 0.085 features ? r ds(on) = 0.07 ( typ.) @ v gs = 10v, i d = 19a ? low gate charge ( typical 60 nc) ?low c rss ( typical 60 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd improved capability ?rohs compliant description these n-channel enhancement mode power field effect transis - tors are produced using fairchild?s proprietary, planar stripe, dmos technology . this advanced technology has be en especially t ailored to mini - mize on-state resistance, prov ide sup erior switching perfor - mance, and withstand high energy p ulse in the avalanche and commutation mode. these devices are well suited for high effi - cient switched mode power supplies and active power factor corr ection. to-3pn fda series gs d d g s symbol parameter FDA38N30 unit v dss drain to source voltage 300 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 38 a -continuous (t c = 100 o c) 22 i dm drain current - pulsed (note 1) 150 a e as single pulsed avalanche energy (note 2) 1200 mj i ar avalanche current (note 1) 38 a e ar repetitive avalanche energy (note 1) 31 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 312 w - derate above 25 o c 2.5 w/ o c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case - 0.4 c/ w r cs thermal resistance, case-to-sink 0.24 - c/ w r ja thermal resistance, junction-to-ambient - 40 c/ w mosfet maximum ratings t c = 25 o c unless otherwise noted
2 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity FDA38N30 FDA38N30 to-3pn - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 300 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c - 0.3 - v/ c i dss zero gate voltage drain current v ds = 3 00v, v gs = 0v - - 1 a v ds = 24 0v, t c = 1 25 o c - - 10 i gss gate-body leakage current v gs = 30v, v ds = 0v - - 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 - 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 19a - 0.07 0.085 g fs forward transconductance v ds = 20v, i d = 19a (note 4) - 6.3 - s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2600 - pf c oss output capacitance - 500 - pf c rss reverse transfer capacitance - 60 - pf q g(tot) total gate charge at 10v v ds = 240v, i d = 38a v gs = 10v (note 4, 5) - 60 - nc q gs gate to source gate charge - 17 - nc q gd gate to drain ?miller? charge - 28 - nc switching characteristics t d(on) turn-on delay time v dd = 150v, i d = 38a r g = 25 , v gs = 10v (note 4, 5) - 53 69 ns t r turn-on rise time - 110 143 ns t d(off) turn-off delay time - 118 153 ns t f turn-off fall time - 54 70 ns drain-source diode characteristics i s maximum continuous drain to source diode forward current - - 38 a i sm maximum pulsed drain-source diode forward current - - 150 a v sd drain to source diode forward voltage v gs = 0v, i sd = 38a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 38a di f /dt = 100a/ s (note 4) - 315 - ns q rr reverse recovery charge - 4.0 - c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 1.7mh, i as = 38a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 38a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 30 0 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes: 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes: 1. v ds = 20v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 25 50 75 100 125 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 v gs = 20v v gs = 10v * note : t j = 25 r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 150 o c * notes: 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 2000 4000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 102030405060 0 2 4 6 8 10 12 v ds = 150v v ds = 60v v ds = 240v ? note : i d = 38a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250ua bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 19a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c ] 110100500 0.01 0.1 1 10 100 1000 10 p s 100 p s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.01 0.1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z t jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z t jc (t) 0.5 single pulse thermal response [z t jc ] rectangular pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
7 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet mechanical dimensions to-3pn dimensions in millimeters
8 www.fairchildsemi.com FDA38N30 rev. c0 FDA38N30 n-channel mosfet trademarks the following includes registered and unregi stered trademarks and service marks, ow ned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive lis t of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the applic ation or use of any product or circuit described herein; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fairchild se miconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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